Semiconductor memory device having layout area reduced

ABSTRACT

A metal supplying an N well voltage is provided in a first metal interconnection layer. The metal is electrically coupled to an active layer provided in an N well region by shared contacts so that the N well voltage is supplied to the N well region. A metal supplying a P well voltage is provided in a third metal interconnection layer. The metal supplying the N well voltage is formed using a metal in the first metal interconnection layer and thus does not require a piling region to the underlayer, and only a piling region to the underlayer of the metal for the P well voltage needs to be secured. Therefore, the length in the Y direction of a power feed cell can be reduced thereby reducing the layout area of the power feed cell.

RELATED APPLICATIONS

This application is a Continuation of U.S. Ser. No. 12/797,387, filed onJun. 9, 2010 now U.S. Pat. No. 7,888,748, which is a Continuation ofU.S. Ser. No. 12/255,999, filed on Oct. 22, 2008, now U.S. Pat. No.7,759,743, which is a Continuation of U.S. Ser. No. 11/797,806, filed onMay 8, 2007, now U.S. Pat. No. 7,453,126, claiming priority of JapanesePatent Application No. 2006-132762, filed on May 11, 2006, the entirecontents of each of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor memory device, and moreparticularly to a cell that supplies a prescribed voltage to a well of amemory cell of an SRAM (Static Random Access Memory).

2. Description of the Background Art

In recent years, with widespread use of mobile terminal equipment,digital signal processing in which bulk data such as sounds or images isprocessed at high speed has been increasingly important. SRAM which iscapable of high-speed access processing holds an important place as asemiconductor memory device to be mounted on such mobile terminalequipment.

SRAM has a memory cell configured with a P-channel MOS transistor and anN-channel MOS transistor which are formed in an N well region and a Pwell region, respectively.

FIG. 16 schematically shows a general memory array.

Referring to FIG. 16, the memory array has memory cells MC integratedand arranged in a matrix.

Power feed to the N well region and the P well region of memory cell MC(well feed) may be performed for each memory cell. In the case wherepower is fed individually for each memory cell, however, a region forinterconnection for well feed has to be reserved for each and thereforean individual area of a memory cell MC is increased. Accordingly, thearea of the entire memory array is increased.

Therefore, usually, well feed is performed on the basis of a pluralityof cells rather than being performed individually for each memory cell.

Here, as an example, a cell PMC for executing well feed every fourmemory cells (also simply referred to as a power feed cell hereinafter)is provided on each column along the Y direction. A plurality of powerfeed cells are provided along the X direction to configure a power feedcell row. FIG. 16 shows two power feed cell rows each comprised of aplurality of power feed cells.

FIG. 17 is a circuit configuration diagram of a memory cell MC.

Referring to FIG. 17, memory cell MC includes transistors PT1, PT2,NT1-NT4. Here, transistors PT1, PT2 are P-channel MOS transistors, byway of example, and transistors NT1-NT4 are N-channel MOS transistors,by way of example.

Here, transistors NT3, NT4 are a pair of access transistors providedbetween a storage node and a bit line BL and a complementary bit line/BL paired with bit line BL, respectively. Transistors PT1, PT2 are apair of load transistors each provided between a storage node and ahigh-side power supply voltage. Transistors NT1, NT2 are a pair ofdriver transistors each provided between a storage node and a low-sidepower supply voltage. These load transistors and driver transistor formtwo inverters in memory cell MC.

Specifically, transistor PT1 is arranged between a high-side powersupply voltage ARVDD (also referred to as voltage ARVDD hereinafter) anda storage node Nd1 and has the gate electrically coupled to a storagenode Nd2. Transistor NT1 is arranged between storage node Nd1 and alow-side power supply voltage ARVSS (also referred to as voltage VSShereinafter) and has the gate electrically coupled to storage node Nd2.Transistor PT2 is arranged between voltage ARVDD and storage node Nd2and has the gate electrically coupled to storage node Nd1. TransistorNT2 is arranged between storage node Nd2 and voltage ARVSS and has thegate electrically coupled to storage node Nd1.

Transistors PT1, PT2 and NT1, NT2 form two CMOS inverters for holdingsignal levels at storage nodes N1 and N2, which are cross-coupled toconfigure a CMOS-type flip-flop.

Transistor NT3 is arranged between storage node Nd1 and bit line BL andhas the gate electrically coupled to a word line WL. Transistor NT4 isarranged between storage node Nd2 and bit line /BL and has the gateelectrically coupled to word line WL.

Data writing/reading for storage nodes Nd1 and Nd2 are executed bytransistors NT3 and NT4 turning on in response to activation of wordline WL to allow storage nodes Nd1 and Nd2 to be electrically coupled tobit lines BL and /BL, respectively.

For example, when word line WL is inactivated to turn off transistorsNT3, NT4, one of the N-channel MOS transistor and the P-channel MOStransistor which configure each CMOS inverter turns on, according to thedata level held at storage nodes Nd1 and Nd2. Accordingly, according tothe data level held in memory cell MC, storage nodes Nd1 and Nd2 areelectrically coupled to one and the other of the high-side power supplyvoltage corresponding to an “H” level of data and the low-side powersupply voltage corresponding to an “L” level of data.

Then, it becomes possible to hold data in memory cell MC in the standbystate in which word line WL is inactivated.

Furthermore, in this configuration, a high-side power supply voltageVDDB (also referred to as N well voltage VDDB hereinafter) is suppliedto the back gates, namely the N well regions of transistors PT1, PT2which are P-channel MOS transistors, and a low-side power supply voltageVSSB (also referred to as P well voltage VSSB) is supplied to the backgates, namely the P well regions of transistors NT1-NT4 which areN-channel MOS transistors. In other words, N well voltage VDDB issupplied to the N well region forming a P-channel MOS transistor ofmemory cell MC, and P well voltage VSSB is supplied to the P well regionforming an N-channel MOS transistor.

In particular, in this configuration, high-side power supply voltagesARVDD and VDDB as well as low-side power supply voltages ARVSS and VSSBcan independently be supplied. In other words, voltages ARVDD, ARVSS fordriving memory cell MC and N well voltages VDDB, VSSB for well feed areindependently supplied, so that the well voltage is enhanced therebyimproving software error resistance.

FIG. 18 illustrates a layout pattern of memory cells and power feedcells of a conventional memory array.

Referring to FIG. 18, here, power feed cell PMCP is provided between twomemory cells MC, and four memory cells MC and two power feed cells PMCPare shown. Furthermore, a P well region and an N well region in whichactive regions for forming memory cell MC and power feed cell PMCP aredisposed are alternately disposed in the row direction, namely in the Xdirection to extend in the column direction, namely in the Y direction.

The layout of memory cell MC and power feed cell PMCP which isreflective-symmetric with respect to a boundary region is repeatedlyarranged, and memory cell MC and power feed cell PMCP have activeregions and interconnection lines disposed in reflective symmetry in theY direction. Here, although not shown, in a memory cell column, activeregions and interconnection lines are disposed in reflective symmetry inthe X direction between adjacent memory cells MC.

Although memory cell MC and power feed cell PMCP are different ininterconnection and the like, an active region and an interconnectionline are disposed in power feed cell PMCP using a similar layout patternas memory cell MC in order to make the layout patterns uniform. In otherwords, in the column direction, power feed cell PMCP is formed using adummy layout pattern similar to the layout pattern of memory cell MC tohave a reflective-symmetric relation in the X direction with theadjacent memory cell MC.

The use of this layout pattern makes it possible to shape uniform layoutpatterns having reduced pattern variations with the continuity of layoutpatterns of the cell layout being kept.

FIG. 19 illustrates a part of the cell layout shown in FIG. 18.

Referring to FIG. 19, shown here are two memory cells MC and a powerfeed cell PMCP arranged therebetween in a memory cell column.

In the following, a layout pattern of memory cell MC and power feed cellPMCP will be described.

FIG. 20 illustrates a layout pattern of memory cell MC.

FIG. 20( a) shows a layout pattern of an underlying portion of memorycell MC.

Referring to FIG. 20( a), an N-type N well region is disposed to extendlinearly in the Y direction, and P-type P well regions are disposed onopposite sides of the N well region. A load transistor is formed in theN well region, and an access transistor and a driver transistor areprovided in the P well region. These N well region and P well regionsare arranged to extend in the column direction, and memory cells MCaligned in a line are formed using these N well region and P wellregions.

Specifically, in the P well region, a rectangular-shaped, transistorformation active region (also simply referred to as an active regionhereinafter) 100 is formed to extend in the Y direction. A polysiliconinterconnection line 105 and a polysilicon interconnection line 104 forforming a storage node are disposed in the X direction each to intersectactive region 100. Polysilicon interconnection line 105 is disposed toextend into the N well region. Polysilicon interconnection line 104 isdisposed in the P well region.

A contact 110 for forming a storage node is disposed between polysiliconinterconnection lines 104 and 105. A contact 111 for establishingcontact with bit line BL as described later is disposed in an outerregion of active region 100 which is divided by polysiliconinterconnection line 105. In addition, a contact 109 for establishingcontact with an interconnection line receiving voltage ARVSS asdescribed later is disposed in an outer region of active region 100which is divided by polysilicon interconnection line 104.

Furthermore, a contact 108 for forming a gate region and establishingcontact with word line WL as describe later is disposed abovepolysilicon interconnection line 104.

In the N well region, rectangular-shaped active regions 102, 103extending in the Y direction are arranged spaced apart from each otherand displaced from each other in the Y direction. Polysiliconinterconnection line 105 is disposed to extend in the X direction acrossactive region 102. A polysilicon interconnection line 107 is disposed toextend in the X direction across active region 103 as well. A contact112 for establishing contact with an interconnection line receivingvoltage ARVDD is disposed in an outer region of active region 102 whichis divided by polysilicon interconnection line 105. Furthermore, acontact 115 for establishing contact with an interconnection linereceiving voltage ARVDD is disposed in an outer region of active region103 which is divided by polysilicon interconnection line 107.

In active region 102, a shared-contact 113 is formed which establishescontact with polysilicon interconnection line 107 in common with theactive region gate-isolated by polysilicon interconnection line 105. Inactive region 103, a shared contact 114 is formed which establishescontact with polysilicon interconnection line 105 in common with theactive region gate-isolated by polysilicon interconnection line 107.Formation of this shared contact 113 allows electrical connection toboth active region 102 and polysilicon interconnection line 107 with onecontact without using one-layer metal. Furthermore, formation of sharedcontact 114 allows electrical connection to both active region 103 andpolysilicon interconnection line 105 with one contact without usingone-layer metal.

In the other P well region, a rectangular-shaped active region 101 isformed to extend in the Y direction. A polysilicon interconnection line106 and polysilicon interconnection line 107 provided extending from theN well region are disposed in the X direction, each intersecting activeregion 101. Polysilicon interconnection line 106 is disposed in the Pwell region.

A contact 117 for forming the other storage node is disposed betweenpolysilicon interconnection lines 106 and 107. A contact 116 forestablishing contact with the complementary bit line /BL as describedlater is disposed in an outer region of active region 101 which isdivided by polysilicon interconnection line 107. Furthermore, a contact118 for establishing contact with an interconnection line receivingvoltage ARVSS as described later is disposed in an outer region ofactive region 101 which is divided by polysilicon interconnection line106. In addition, a contact 119 for forming a gate region andestablishing contact with word line WL as described later is disposedabove polysilicon interconnection line 106.

The positional relation between the contacts for bit lines BL, /BL andthe contacts receiving voltage ARVSS is symmetric between active regions100 and 101.

Here, the region surrounded by the dotted line as shown is a region inwhich P-type ion implantation is performed on active regions 102, 103 ofN well regions in order to form impurity regions of P-channel MOStransistors. A region not surrounded by a dotted line is subjected toN-type ion implantation.

FIG. 20( b) shows a layout pattern up to a first metal interconnectionlayer (also referred to as the first layer) of memory cell MC.

As shown in FIG. 20( b), in the first layer, a metal 123 is providedelectrically connected to contact 108. Furthermore, a metal 122 isprovided electrically connected to contact 111. In addition, a metal 128is provided electrically coupling contact 110 forming a storage node andshared contact 113 to each other. A metal 127 is provided electricallyconnected to contact 112. A metal 129 is provided electrically couplingcontact 117 forming a storage node and shared contact 114 to each other.Additionally provided are a metal 126 electrically connected to contact118, a metal 120 connected to contact 119, and a metal 121 connected tocontact 116.

FIG. 20( c) shows a layout pattern up to a second metal interconnectionlayer (also referred to as the second layer) of memory cell MC.

As shown in FIG. 20( c), in the second layer, a metal 131 is providedelectrically coupled to metal 122 through a contact 130. Furthermore, ametal 133 is provided electrically coupled to metal 123 through acontact 132. In addition, a metal 135 is provided electrically coupledto metal 124 through a contact 134. Furthermore, a shared metal 137 isprovided electrically coupled to metals 127 and 125 through contacts 136and 138, respectively. Moreover, a metal 140 is provided electricallycoupled to metal 126 through a contact 139. In addition, a metal 141 isprovided electrically coupled to metal 120 through a contact 142. Inaddition, a metal 144 is provided electrically coupled to metal 121through a contact 143.

Here, metal 135 and metal 140 form bit lines BL and /BL, respectively.Metal 137 forms a power supply line which supplies voltage ARVDD.

FIG. 20( d) shows a layout pattern up to a third metal interconnectionlayer (also referred to as the third layer) of memory cell MC.

As shown in FIG. 20( d), in the third layer, a metal 151 is providedelectrically coupled to metal 131 through a contact 150. Furthermore, ametal 154 is provided electrically coupled to metal 133 through acontact 152 and coupled to metal 141 through a contact 153. In addition,a metal 156 is provided electrically coupled to metal 144 through acontact 155.

Here, metal 151 forms a power supply line supplying voltage ARVSS. Metal154 forms word line WL. Furthermore, metal 156 forms a power supply linesupplying voltage ARVSS.

In other words, power supply lines and bit lines BL, /BL and word lineWL are formed using the second and third metal interconnection layers.

FIG. 21 illustrates a layout pattern of a conventional power feed cellPMCP.

FIG. 21( a) shows a layout pattern of an underlying portion of powerfeed cell PMCP.

Referring to FIG. 21( a), an N-type N well region is disposed tolinearly extend in the Y direction, and P-type P well regions aredisposed on opposite sides of the N well region. These N well region andP well regions are shared with memory cell MC and arranged extending inthe column direction. In these N well region and P well regions, a powerfeed cell for performing well feed is formed using transistor formationactive regions formed as a dummy layout pattern.

Specifically, in the middle region of the P well region of the powerfeed cell, a dummy active region 207 for feeding a well voltage isdisposed. Furthermore, a dummy active region 208 for feeding a wellvoltage is disposed similarly in the middle portion of the other P wellregion. In addition, a dummy active region 204 for feeding a wellvoltage is disposed in the middle portion of the N well region.

Then, in the upper region, in a boundary region between the upper,adjacent memory cell MC and power feed cell which constitute the samecolumn, the aforementioned active region 100 of memory cell MC in thecolumn direction is shown. As described above, the layout patterns ofmemory cells MC adjacent in the memory cell column are formed inreflective symmetry along the X direction, and active region 100 isdisposed to extend along the Y-axis direction. Here, to form a powerfeed cell, active region 100 is configured to be disposed not extendingin the power feed cell. Similarly, active regions 103 and 101 are alsoconfigured to be disposed not extending in the power feed cell.

Similarly, in the lower region, in a boundary region between the lower,adjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, an active region 200 for forming thelower adjacent memory cell MC is shown. As described above, to form apower feed cell, active region 200 is configured to be disposed notextending in the power feed cell. Similarly, active regions 203, 201 arealso configured to be disposed not extending in the power feed cell.

Then, a dummy polysilicon interconnection line is disposed in order tokeep the continuity of the layout pattern. Specifically, dummypolysilicon interconnection lines 222-225 are provided along the Xdirection in reflective symmetry with the layout pattern of the adjacentmemory cell MC. In the upper region, polysilicon interconnection line225 is disposed along the X direction in an end region of active region100, and polysilicon interconnection line 224 is disposed to extendalong the X direction in end regions of active regions 103 and 101. Onthe other hand, in the lower region, polysilicon interconnection line223 is disposed to extend along the X direction in an end region ofactive region 201, and polysilicon interconnection line 222 is disposedto extend along the X direction in end regions of active regions 200,203.

Then, contacts electrically coupled to polysilicon interconnection lines222-225 are disposed to keep continuity of the layout pattern.

Specifically, a shared contact 219 is disposed which establishes ashared contact for polysilicon interconnection line 222 and dummy activeregion 204. A contact 217 is disposed for polysilicon interconnectionline 223. Furthermore, a shared contact 216 is disposed whichestablishes a shared contact for polysilicon interconnection line 224and dummy active region 204. A contact 213 is disposed for polysiliconinterconnection line 225.

Then, in dummy active region 207, a contact 209 is disposed forestablishing contact with a power supply line supplying P well voltageVSSB to be fed to the P well. In dummy active region 204, a contact 210is disposed for establishing contact with a power supply line supplyingN well voltage VDDB to be fed to the N well. In dummy active region 208,a contact 211 is disposed for establishing contact with a power supplyline supplying P well voltage VSSB to be fed to the P well.

Here, the region surrounded with the dotted line as shown is a region inwhich P-type ion implantation is performed on active regions 207, 208 inthe P well regions. It is noted that the region not surrounded with adotted line is a region subjected to N-type ion implantation.

FIG. 21( b) shows a layout pattern up to the first metal interconnectionlayer of power feed cell PMCP.

As shown in FIG. 21( b), in the first layer, a metal 236 is providedwhich is electrically connected to contact 213 and contact 209. Inaddition, a metal 235 is provided which is electrically connected toshared contacts 216, 219 and contact 210. In addition, a metal 231 isprovided which is electrically connected to contact 211 and contact 217.

In the upper region, in the boundary region between the upper adjacentmemory cell MC and the power feed cell which constitute the same column,the metals having the aforementioned active regions 100, 101, 103 ofmemory cell MC in the column direction connected through the contactsare denoted by the same reference characters and are similar to thoseillustrated in FIG. 20( b). Therefore, a detailed description thereofwill not be repeated.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, active region 200 for forming the loweradjacent memory cell MC is shown and is electrically coupled to a metal234 through a contact 221. Active region 203 is electrically coupled toa metal 233 through a contact 220. Active region 201 is electricallycoupled to a metal 232 through a contact 218.

FIG. 21( c) shows a layout pattern up to the second metalinterconnection layer of power feed cell PMCP.

As shown in FIG. 21( c), in the second layer, a metal 255 is providedwhich is electrically coupled to metal 235 through a contact 254.Furthermore, a metal 253 is provided which is electrically coupled tometal 236 through a contact 252. In addition, a metal 243 is providedwhich is electrically coupled to metal 231 through a contact 242.Moreover, a metal 245 is provided which is electrically coupled to metal231 through a contact 244. This metal 245 is a dummy metal formed inaccordance with the same layout pattern as metals 253, 255, 243.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 135 forming bit line BL electrically coupled throughcontact 134 of memory cell MC as illustrated in FIG. 20( c) is disposedto extend along the Y direction. Furthermore, metal 137 forming a powersupply line supplying voltage ARVDD electrically coupled through contact138 of memory cell MC is disposed to extend along the Y direction.Similarly, metal 140 forming bit line /BL of memory cell MC is disposedto extend along the Y direction.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, metal 234 and a metal 257 areelectrically coupled to each other through a contact 256. Furthermore,metal 233 and metal 137 are electrically coupled to each other through acontact 249. In addition, metal 232 and metal 140 are electricallycoupled to each other through a contact 246.

FIG. 21( d) shows a layout pattern up to the third metal interconnectionlayer of power feed cell PMCP.

As shown in FIG. 21( d), in the third layer, a shared metal 263 isprovided which is electrically coupled to metal 253 and metal 243through contacts 268 and 262, respectively. Furthermore, a metal 265 isprovided which is electrically couple to metal 255 through a contact264. It is noted that metal 245 is provided as a dummy metal asdescribed above and is not electrically coupled to metal 245 and metal265 through a contact.

This metal 263 forms a power supply line supplying P well voltage VSSB,and metal 265 forms a power supply line supplying N well voltage VDDB.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 156 forming the power supply line electricallycoupled through contact 155 of memory cell MC as illustrated in FIG. 20(d) is disposed to extend along the X direction.

On the other hand, as for the lower region, in the boundary regionbetween the lower adjacent memory cell MC and the power feed cell whichconstitute the same column on the lower side, metal 257 is electricallycoupled to a metal 267 through a contact 266. This metal 267 is formedas a power supply line supplying voltage ARVSS provided for the loweradjacent memory cell MC.

In other words, in this configuration, as for N well voltage VDDB, thewell voltage is supplied through a path of metal 265-contact 264-metal255-contact 254-metal 235-contacts 216, 219, 210-dummy active region204. On the other hand, as for P well voltage VSSB, the well voltage issupplied through a path of metal 263-contacts 262, 268-metals 253,243-contacts 252, 242-metals 236, 231-contacts 209, 211-dummy activeregions 207, 208.

FIG. 22 is a structural view in cross section along II-II of power feedcell PMCP.

Referring to FIG. 22, metal 263 supplying P well voltage VSSB isprovided in the third layer. Metals 135, 140 forming bit lines BL, /BLand metal 137 supplying voltage ARVDD are provided in the second layeras described above. Metal 235 electrically coupled to N well voltageVDDB is provided in the first layer and is electrically coupled toactive region 204 subjected to N+ ion implantation in the N well regionthrough contact 210.

Metal 236 electrically coupled to P well voltage VSSB is electricallycoupled to active region 207 subjected to P+ ion implantation in the Pwell region through contact 209. Metal 231 electrically coupled to Pwell voltage VSSB is electrically coupled to active region 208 subjectedto P+ ion implantation in the P well region through contact 211.

The configuration in power feed cell PMCP allows N well voltage VDDB tobe supplied to the N well region through dummy active region 204 andallows P well voltage VSSB to be supplied to the P well regions throughdummy active regions 207 and 208.

Accordingly, well feed can be performed on the basis of a plurality ofcells so that the layout area of each memory cell MC is reduced therebyreducing the layout area of the memory array as a whole.

On the other hand, the conventional power feed cell has the followingproblems in its layout.

FIG. 23 is a layout diagram in a case where a power supply line isdisposed for the conventional power feed cell.

Here, a part of the metals illustrated in FIGS. 21( c) and (d) is shown.

In the memory array, four interconnection tracks are provided along theY direction. Specifically, interconnection tracks 2M0-2M3 provided herein the second metal interconnection layer are shown along the Ydirection. Three of them are used as bit lines BL, /BL and a powersupply line supplying voltage ARVDD. Here, 3M0, 3M1 representinterconnection tracks provided in the third metal interconnection layerto form power supply lines supplying P well voltages VSSB and VDDB.

Therefore, in order to provide interconnection along the Y direction soas not to interfere with these bit lines BL, /BL and the power supplyline for voltage ARVDD, the region corresponding to the remaining oneinterconnection track is used to interconnect metals for establishingcontact between the power supply lines (N well voltages VDDB, VSSB)provided in the third metal interconnection layer along the X directionand the active region in the underlying region. In other words, a pilingregion from the third metal interconnection layer to the underlayer hasto be secured. The piling region refers to an interconnection spacerequired to establish contact with an underlying metal interconnectionlayer. Here, by way of example, the aforementioned metals 253, 255 eachof 0.1 μm in the X direction and 0.5 μm in the Y direction are alignedin the Y direction.

This piling region needs to be provided for each of the power supplyline supplying N well voltage VDDB and the power supply line supplying Pwell voltage VSSB, so that some area needs to be secured to some extent.Therefore, the area of power feed cell PMCP cannot be reduced in orderto secure these two piling regions. In other words, the layout area ofthe power feed cell is inevitably increased by the lengths of the metalsin the Y direction to be used for interconnection from two power supplylines formed in the same metal interconnection layer to the underlayer.

SUMMARY OF THE INVENTION

The present invention is made to solve the problems as described above.An object of the present invention is to provide a semiconductor memorydevice in which the layout area of the entire memory array can befurther reduced by reducing the layout area of a power feed cell.

A semiconductor memory device in accordance with the present inventionincludes a memory array having a plurality of memory cells arranged in amatrix of rows and columns, each including a pair of load transistors ofa second conductivity type formed in a first well region of a firstconductivity type and a pair of diver transistors of the firstconductivity type connected to the load transistors to form a flip-flop,and a plurality of power feed cells, each provided corresponding to amemory cell column, which constitute a row provided to feed the firstand second well regions. The first and second well regions arealternately disposed in a row direction to extend in a column direction.The semiconductor memory device further includes: a first power supplyline provided corresponding to the plurality of power feed cells alongthe row direction and electrically coupled to the power feed cell tosupply a first power supply voltage to the first well region; and asecond power supply line provided corresponding to the plurality ofpower feed cells along the row direction and electrically coupled to thepower feed cell to supply a second power supply voltage to the secondwell region. The first power supply line is electrically coupled to thefirst well region through a contact provided for a first metalinterconnection layer, and the second power supply line is formed in anupper layer above the first metal interconnection layer and iselectrically coupled to the second well region through a plurality ofcontacts provided for each metal interconnection layer.

The semiconductor memory device in accordance with the present inventionincludes a power feed cell feeding first and second well regions byfirst and second power supply lines, respectively. The first powersupply line is electrically coupled to the first well region through acontact provided in a first metal interconnection layer, and the secondpower supply line is formed in an upper layer above the first metalinterconnection layer and is electrically coupled to the second wellregion through a plurality of contacts provided for each metalinterconnection layer. In other words, the first power supply line iselectrically coupled to the first well region through one contact andthus does not require a piling region electrically coupling through aninterconnection layer, so that a layout margin for securing such aregion can be reduced thereby reducing the layout area of a power feedcell and reducing the area of the memory array as a whole.

The foregoing and other objects, features; aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram of a semiconductor memory device inaccordance with an embodiment of the present invention.

FIG. 2 illustrates a layout pattern of memory cells and power feed cellsof a memory array in accordance with a first embodiment of the presentinvention.

FIG. 3 illustrates a part of the cell layout shown in FIG. 2.

FIG. 4 illustrates a layout pattern of the power feed cell in accordancewith the first embodiment of the present invention.

FIG. 5 is a layout diagram in a case where a power supply line isdisposed for the power feed cell in accordance with the first embodimentof the present invention.

FIG. 6 illustrates a layout pattern of memory cells and power feed cellsof a memory array in accordance with a second embodiment of the presentinvention.

FIG. 7 illustrates a part of the cell layout shown in FIG. 6.

FIG. 8 illustrates a layout pattern of the power feed cell in accordancewith the second embodiment of the present invention.

FIG. 9 is a diagram in which the layouts of metals in the first layer ofthe power feed cells in accordance with the first and second embodimentsof the present invention are compared to each other.

FIG. 10 illustrates a layout pattern of memory cells and power feedcells of a memory array in accordance with a third embodiment of thepresent invention.

FIG. 11 illustrates a part of the cell layout shown in FIG. 10.

FIG. 12 illustrates a layout pattern of the power feed cell inaccordance with the third embodiment of the present invention.

FIG. 13 is a diagram in which the layouts of metals in the first layerof the power feed cells in accordance with the second and thirdembodiments of the present invention are compared to each other.

FIG. 14 illustrates memory cells and power feed cells integrated andarranged in a matrix in a memory array in accordance with a fourthembodiment of the present invention.

FIG. 15 illustrates a layout pattern of a feed enhancement cell inaccordance with the fourth embodiment of the present invention.

FIG. 16 is a schematic diagram of a general memory array.

FIG. 17 is a circuit configuration diagram of a memory cell.

FIG. 18 illustrates a layout pattern of memory cells and power feedcells of a conventional memory array.

FIG. 19 illustrates a part of the cell layout shown in FIG. 18.

FIG. 20 illustrates a layout pattern of a memory cell.

FIG. 21 illustrates a layout pattern of a conventional power feed cell.

FIG. 22 is a structural view in cross section along of the power feedcell in FIG. 21.

FIG. 23 is a layout diagram in a case where a power supply line isdisposed for the conventional power feed cell.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, embodiments of the present invention will be describedin detail with reference to the figures. It is noted that in the figuresthe same or corresponding parts will be denoted with the same referencecharacters and a description thereof will not be repeated.

First Embodiment

Referring to FIG. 1, a semiconductor memory device 1 in accordance witha first embodiment of the present invention includes a control circuit20, a memory array 5, a word driver 10, and a column selectcircuit/input/output control circuit 15. Control circuit 20 controls theentire semiconductor memory device 1 based on inputs of address ADD anda control signal CT and executes a necessary instruction or control forword driver 10 and column select circuit/input/output control circuit15. Memory array 5 has memory cells MC integrated and arranged in amatrix and includes a word line WL provided corresponding to each ofmemory cell rows along the row direction (X direction) and bit lines BL,/BL provided corresponding to each of memory cell columns along thecolumn direction (Y direction).

Word driver 10 drives word line WL to execute access to a selectedmemory cell row. Column select circuit/input/output control circuit 15executes column selection of the memory array in response to aninstruction from control circuit 20 and executes a column selectoperation for bit lines BL, /BL, for example, in data writing, drivesbit lines BL, /BL to a prescribed logic level based on input data DINfor data write. In data reading, output data DOUT is generated andoutput which is held by memory cell MC selected based on read currentflowing in the selected memory cell MC through bit lines BL, /BL.

Memory array 5 has memory cells integrated and arranged in a matrix asillustrated in FIG. 16, and a power feed cell row formed of a pluralityof power feed cells is provided every prescribed number of memory cellrows to execute well feed. It is noted that the present invention isparticularly directed to a power feed cell performing well feed tomemory cell MC, of which layout pattern will mainly be described.

Using FIG. 2, a layout pattern of memory cells and power feed cells inaccordance with the first embodiment of the present invention will bedescribed.

Referring to FIG. 2, here, a power feed cell PMC is provided between twomemory cells MC correspondingly to a column, and four memory cells MCand two power feed cells PMC are shown. Furthermore, a P well region andan N well region in which active regions for forming memory cell MC andpower feed cell PMC are disposed are alternately disposed in the rowdirection, namely in the X direction to extend in the column direction,namely in the Y direction.

The layout of memory cells MC and power feed cells PMC which isreflective-symmetric with respect to the boundary region is repeatedlyarranged. Memory cells MC and power feed cell PMC each have activeregions and interconnection lines disposed in reflective symmetry in theY direction. Although not shown here, in a memory cell column, activeregions and interconnection lines are disposed in reflective symmetry inthe X direction between adjacent memory cells MC.

Although memory cell MC and power feed cell PMC are different ininterconnection and the like, an active region and an interconnectionline are disposed in power feed cell PMC using a similar layout patternas memory cell MC in order to make the layout pattern uniform. In otherwords, in the column direction, power feed cell PMC is formed using adummy layout pattern similar to the layout pattern of memory cell MC tohave a reflective-symmetric relation with the adjacent memory cell MC inthe X direction.

The use of this layout pattern makes it possible to shape a uniformlayout pattern with reduced pattern variations with the continuity ofthe layout pattern of the cell layout being kept.

Using FIG. 3, a part of the cell layout shown in FIG. 2 will bedescribed.

Referring to FIG. 3, shown here are two memory cells MC and power feedcell PMC provided therebetween in a memory cell column. It is noted thatthe layout pattern of memory cell MC is similar to that illustrated inFIG. 20. Therefore, detailed description of the same parts will not berepeated and the same parts will be denoted with the same referencecharacters.

In the following, a layout pattern of power feed cell PMC in accordancewith the first embodiment of the present invention veil be described.Here, a power supply line supplying N well voltage VDDB is formed usingthe first metal interconnection layer, by way of illustration.

Using FIG. 4, a layout pattern of power feed cell PMC in accordance withthe first embodiment of the present invention will be described.

FIG. 4( a) shows a layout pattern of an underlying portion of power feedcell PMC.

Here, as described above, an N-type N well region is disposed tolinearly extend in the Y direction, and P-type P well regions aredisposed on opposite sides of the N well region. These N well region andP well regions are arranged extending in the column direction to beshared with memory cell MC. A power feed cell for executing well feed isformed using transistor formation active regions formed as a dummylayout pattern in these N well region and P well regions.

Specifically, a dummy active region 301 for feeding a well voltage isdisposed in the P well region of the power feed cell. A dummy activeregion 303 for feeding a well voltage is disposed similarly in the otherP well region. A dummy active region 300 for feeding a well voltage isdisposed in the N well region.

Then, in order to keep the continuity of the layout pattern, a dummypolysilicon interconnection line is disposed. Specifically, dummypolysilicon interconnection lines 222-225 are provided along the Xdirection in reflective symmetry with the layout pattern of the adjacentmemory cell MC. In the upper region, polysilicon interconnection line225 is disposed along the X direction in an end region of active region100, and polysilicon interconnection line 224 is disposed to extendalong the X direction in end regions of active regions 103 and 101. Onthe other hand, in the lower region, polysilicon interconnection line223 is disposed to extend along the X direction in an end region ofactive region 201, and polysilicon interconnection line 222 is disposedto extend along the X direction in end regions of active regions 200,203.

Then, contacts electrically coupled to polysilicon interconnection lines222-225 are disposed in order to keep the continuity of the layoutpattern.

Specifically, shared contact 219 is disposed to establish a sharedcontact with polysilicon interconnection line 222 and active region 300.Furthermore, contact 217 is disposed for polysilicon interconnectionline 223. In addition, shared contact 216 is disposed to establish ashared contact with polysilicon interconnection line 224 and activeregion 300. In addition, contact 213 is disposed for polysiliconinterconnection line 225.

Then, a contact 302 for establishing contact with a power supply linesupplying P well voltage VSSB to be fed to the P well is disposed indummy active region 301. Furthermore, a contact 304 for establishingcontact with a power supply line supplying P well voltage VSSB to be fedto the P well is disposed in dummy active region 303.

Here, the region surrounded with the dotted line as shown is a region inwhich P-type ion implantation is performed on active regions 301, 303 inthe P well regions. Here, the region not surrounded with a dotted lineis subjected to N-type ion implantation.

As compared with the layout pattern illustrated in FIG. 21, there aredifferences in that dummy active regions 207, 208 formed in the P wellregions are replaced by dummy active regions 301, 303 and in that dummyactive region 204 is replaced by dummy active region 300. The otherconfiguration is similar to that illustrated in FIG. 21.

The layout pattern of dummy active regions 301, 303 is such that theyare shifted to come closer to the boundary region between power feedcell PMC and memory cell MC, symmetrically along the Y direction.Specifically, dummy active region 301 and polysilicon interconnectionline 225 are laid out to come closer to each other with a prescribedspacing. Furthermore, dummy active region 303 and polysiliconinterconnection line 223 are laid out to come closer to each other witha prescribed spacing.

Then, the length in the Y direction of dummy active region 300 isreduced and the distance between shared contacts 216 and 219 is reduced,so that the length in the Y direction of the underlying region of thepower feed cell is reduced. Here, no contact is provided in dummy activeregion 300.

FIG. 4( b) shows a layout pattern up to the first metal interconnectionlayer of power feed cell PMC.

As shown in FIG. 4( b), in the first layer, a metal 310 is providedwhich is electrically connected to contact 213 and contact 302.Furthermore, a metal 312 is provided which is electrically connected toshared contacts 216 and 219. In addition, a metal 311 is provided whichis electrically connected to contact 304 and contact 217. This metal 312is used as a power supply line supplying N well voltage VDDB. This metal312 has a portion linearly extending in the X direction and Y directionin power feed cell PMC and is formed in a shape point-symmetric withrespect to the central portion and formed continuously extending to beelectrically coupled to respective shared contacts 216 and 219 inadjacent power feed cells PMC in the same row as shown in FIG. 2.

In the upper region, in the boundary region between the upper adjacentmemory cell MC and the power feed cell which constitute the same column,the metals having the aforementioned active regions 100, 101, 103 ofmemory cell MC in the column direction connected through contacts aredenoted by the same reference characters and are similar to thoseillustrated in FIG. 20( b), and thus a detailed description thereof willnot be repeated.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, active regions 200, 201, 203 for formingthe lower adjacent memory cell MC are shown and are similar to thoseillustrated in FIG. 21( b), and thus a detailed description thereof willnot be repeated.

FIG. 4( c) shows a layout pattern up to the second metal interconnectionlayer of power feed cell PMC.

As shown in FIG. 4( c), in the second layer, a metal 323 is providedwhich is electrically coupled to metal 310 through a contact 322. Inaddition, a metal 321 is provided which is electrically coupled to metal311 through a contact 320.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 135 forming bit line BL electrically coupled throughcontact 134 of memory cell MC as illustrated in FIG. 20( c) is disposedto extend along the Y direction. Furthermore, metal 137 forming a powersupply line supplying voltage ARVDD electrically coupled through contact138 of memory cell MC is disposed to extend along the Y direction.Similarly, metal 140 forming bit line /BL of memory cell MC is disposedto extend along the Y direction.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, metal 234 and metal 257 are electricallycoupled to each other through contact 256 illustrated in FIG. 21( c).Furthermore, metal 233 and metal 137 are electrically coupled to eachother through contact 249. In addition, metal 232 and metal 140 areelectrically coupled to each other through contact 246.

FIG. 4( d) shows a layout pattern up to the third metal interconnectionlayer of power feed cell PMC.

As shown in FIG. 4( d), in the third layer, metals 332 and 333 areprovided which are electrically coupled to metal 323 through contacts334 and 335, respectively. Furthermore, metals 332 and 333 are providedwhich are electrically coupled to metal 321 through contacts 330 and331, respectively. These metals 332 and 333 form power supply linessupplying P well voltage VSSB.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 156 forming a power supply line supplying voltageARVSS electrically coupled through contact 155 of memory cell MCillustrated in FIG. 20( d) is disposed to extend along the X direction.

On the other hand, as for the lower region, in the boundary regionbetween the lower adjacent memory cell MC and the power feed cell whichconstitute the same column on the lower side, metal 257 is electricallycoupled to metal 267 through contact 266. This metal 267 is disposed toextend along the X direction as a power supply line supplying voltageARVSS provided for the lower adjacent memory cell MC.

In summary, in this configuration, as for N well voltage VDDB, the wellvoltage is supplied though a path of metal 312-contacts 216, 219-dummyactive region 300. On the other hand, as for P well voltage VSSB, thewell voltage is supplied through a path of metals 332, 333-contacts 330,331, 334, 335-metals 321, 323-contacts 320, 322-metals 311, 310-contacts304, 302-dummy active regions 303, 301.

Using FIG. 5, a layout will be described in a case where a power supplyline is disposed for the power feed cell in accordance with the firstembodiment of the present invention.

Here, a part of the metals illustrated in FIGS. 4( c) and (d) is shown.

As described above, in the memory cell array, four interconnectiontracks are provided in the second metal interconnection layer.Specifically, here, 2M0-2M3 are shown along the Y direction. Three ofthem are used as bit lines BL, /BL and a power supply line supplyingvoltage ARVDD.

Therefore, in order to provide interconnection of the remaining two Nwell voltages VDDB and VSSB so as not interfere with these bit lines BL,/BL and the power supply line for voltage ARVDD, a piling region to theunderlayer needs to be secured using the region corresponding to theremaining one interconnection track. In the configuration of the firstembodiment, the power supply line supplying N well voltage VDDB isformed using a metal in the first metal interconnection layer differentform the third metal interconnection layer and does not require a pilingregion to the underlayer, and it is only necessary to secure a pilingregion of the power supply line for P well voltage VSSB.

Accordingly, in the conventional power feed cell, as described above,the length in the Y direction cannot be reduced in order to secure twodifferent piling regions along the Y direction. However, theconfiguration of the present invention only needs an area for one pilingregion so that the length in the Y direction of power feed cell PMC canbe reduced thereby reducing the layout area of a power feed cell. Inother words, the layout area of the memory array can be further reducedas a whole by reducing the layout area of a power feed cell.

In the configuration in FIG. 23, for the conventional power feed cellPMCP, a layout margin needs to be secured to such an extent that threeinterconnection tracks each provided along the X direction can bearranged along the Y direction. However, in the case of power feed cellPMC in accordance with the first embodiment of the present invention,the layout margin is reduced to such an extent that two interconnectiontracks each provided along the X direction can be arranged along the Ydirection, as shown in FIG. 5.

Here, in this example, two power supply lines supplying P well voltageVSSB are arranged in interconnection tracks 3M0, 3M1 in the third metalinterconnection layer, for the purpose of enhancing P well voltage VSSB,by way of example. However, in particular, the number of the powersupply lines supplying P well voltage VSSB may not be two, andinterconnection may be configured with one interconnection line, as amatter of course. Furthermore, in this example, metal 312 and dummyactive region 300 are electrically coupled to each other through onlyshared contacts 216, 219. However, a contact electrically coupled tometal 312 may be provided in dummy active region 300.

Second Embodiment

Using FIG. 6, a layout pattern of memory cells and power feed cells of amemory array in accordance with a second embodiment of the presentinvention will be described.

Referring to FIG. 6, here, a power feed cell PMCa is provided betweentwo memory cells MC correspondingly to a column, and four memory cellsMC and two power feed cells PMCa are shown. Furthermore, a P well regionand an N well region in which active regions for forming memory cell MCand power feed cell PMCa are disposed are alternately disposed in therow direction, namely in the X direction to extend in the columndirection, namely in the Y direction.

The layout of memory cell MC and power feed cell PMCa which isreflective-symmetric with respect to the boundary region is repeatedlyarranged. Memory cell MC and power feed cell PMCa have active regionsand interconnection lines disposed in reflective symmetry in the Ydirection. Although not shown here, in a memory cell column, activeregions and interconnection lines are disposed in reflective symmetry inthe X direction between adjacent memory cells MC.

Using FIG. 7, a part of the cell layout shown in FIG. 6 will bedescribed.

Referring to FIG. 7, shown here are two memory cells MC and power feedcell PMCa provided therebetween in a memory cell column. Here, thelayout pattern of memory cell MC is similar to that illustrated in FIG.20. Therefore, a detailed description of the same parts will not berepeated and the same parts will be denoted with the same referencecharacters.

In the following, the layout pattern of power feed cell PMCa inaccordance with the second embodiment of the present invention will bedescribed. Here, the position of a contact in an active region receivingP well voltage VSSB is shifted further.

Using FIG. 8, a layout pattern of power feed cell PMCa in accordancewith the second embodiment of the present invention will be described.

FIG. 8( a) shows a layout pattern of an underlying portion of power feedcell PMCa.

Here, as described above, an N-type N well region is disposed tolinearly extend in the Y direction, and P-type P well regions aredisposed on opposite sides of the N well region. These N well region andP well regions are arranged extending in the column direction to beshared with memory cell MC, and a power feed cell for executing wellfeed is formed using transistor formation active regions formed as adummy layout pattern in these N well region and P well regions.

Then, in the P well region of power feed cell PMCa in accordance withthe second embodiment of the present invention, the active regions usedin the memory cells MC adjacent to the upper region and the lower regionare disposed to extend further. Specifically, in place of active regions100, 201, active regions 100# and 201# are disposed to extend to the Pwell regions of power feed cell PMCa. Here, shown are active region 100#bent such that an L-shaped active region is reflective-symmetric alongthe Y direction and active region 200# bent such that an L-shaped activeregion is reflective-symmetric along the X direction. Active regions100# and 201# are isolated by dummy polysilicon interconnection lines225, 223, respectively.

Then, in an active region (isolation active region) of active region100# facing the power feed cell, which is isolated by dummy polysiliconinterconnection line 225, a contact 401 is disposed for establishingcontact with a power supply line supplying P well voltage VSSB to be fedto the P well. On the other hand, in an active region (isolation activeregion) of active region 201# facing the power feed cell, which isisolated by dummy polysilicon interconnection line 223, a contact 404 isdisposed for establishing contact with a power supply line supplying Pwell voltage VSSB to be fed to the P well.

Here, the region surrounded with the dotted line as shown is a region inwhich P-type ion implantation is performed on a part of active regions100# and 201# in the P well regions. The region not surrounded with adotted line is subjected to N-type ion implantation.

As compared with the layout pattern as illustrated in FIG. 4, there aredifferences in that active regions 301, 303 formed in the P well regionsare deleted and replaced by active regions 100#, 201# and in that activeregion 300 is replaced by dummy active region 402. The otherconfiguration is similar to that illustrated in FIG. 4.

As described above, active regions 100#, 201# are disposed in such amanner that the active regions used in the memory cells MC adjacent tothe upper region and the lower region in the same column extend further.Contact 401 is disposed in a position symmetric to contact 109 alongpolysilicon interconnection line 225. Contact 404 is disposed in aposition symmetric to contact 218 along polysilicon interconnection line223.

In the configuration in FIG. 4, dummy active regions 301, 303 areindependent from polysilicon interconnection lines 225, 223 and activeregions 100, 201, respectively, and need to be disposed with aprescribed spacing in order to secure a layout margin. However, in thepresent configuration, the active regions used in the memory cells MCadjacent to the upper region and the lower region are shared, and thegate-isolated active region is used to dispose a contact with a powersupply line supplying P well voltage VSSB to be fed to the P well facingthe power feed cell.

Then, as compared with dummy active region 300, the length in the Ydirection of dummy active region 402 is reduced and the distance betweenshared contacts 216 and 219 is reduced, so that the length in the Ydirection in the underlying region of the power feed cell is reduced.

FIG. 8( b) shows a layout pattern up to the first metal interconnectionlayer of power feed cell PMCa.

As shown in FIG. 8( b), in the first layer, a metal 416 is providedwhich is electrically connected to contact 213 and contact 401.Furthermore, a metal 415 is provided which is electrically connected toshared contacts 216 and 219. In addition, a metal 417 is provided whichis electrically connected to contact 404 and contact 217. This metal 415is used as a power supply line supplying N well voltage VDDB. This metal415 has a part linearly extending in the X direction and the Y directionin power feed cell PMCa and is formed in a shape point-symmetric withrespect to the central portion and formed continuously extending to beelectrically coupled to respective shared contacts 216 and 219 in theadjacent power feed cells PMCa in the same row as shown in FIG. 6.

As described above; in the upper region, in the boundary region betweenthe upper adjacent memory cell MC and the power feed cell whichconstitute the same column, the metals connected through contacts ofmemory cell MC in the column direction are denoted by the same referencecharacters and are similar to those illustrated in FIG. 20( b), and thusa detailed description thereof will not be repeated.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, the metals connected through contacts ofthe lower adjacent memory cell MC are denoted by the same referencecharacters and are similar to those illustrated in FIG. 21( b), and thusa detailed description thereof will not be repeated.

FIG. 8( c) shows a layout pattern up to the second metal interconnectionlayer of power feed cell PMCa.

As shown in FIG. 8( c), in the second layer, a metal 421 is providedwhich is electrically coupled to metal 416 through a contact 420.Furthermore, a metal 423 is provided which is electrically coupled tometal 417 through a contact 422.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 135 which forms bit line BL electrically coupledthrough contact 134 of memory cell MC illustrated in FIG. 20( c) isdisposed to extend along the Y direction. Furthermore, metal 137 whichforms a power supply line supplying voltage ARVDD electrically coupledthrough contact 138 of memory cell MC is disposed to extend along the Ydirection. Similarly, metal 140 which forms bit line /BL of memory cellMC is disposed to extend along the Y direction.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, metal 234 and metal 257 are electricallycoupled to each other through contact 256 illustrated in FIG. 21( c).Furthermore, metal 233 and metal 137 are electrically coupled to eachother through contact 249. In addition, metal 232 and metal 140 areelectrically coupled to each other through contact 246.

FIG. 8( d) shows a layout pattern up to the third metal interconnectionlayer of power feed cell PMCa.

As shown in FIG. 8( d), in the third layer, a shared metal 431 isprovided which is electrically coupled to metals 421 and 423 throughcontacts 430 and 432, respectively. This metal 431 forms a power supplyline supplying P well voltage VSSB.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 156 which forms a power supply line supplying voltageARVSS electrically coupled through contact 155 of memory cell MCillustrated in FIG. 20( d) is disposed to extend along the X direction.

On the other hand, as for the lower region, in the boundary regionbetween the lower adjacent memory cell MC and the power feed cell whichconstitute the same column on the lower side, metal 257 is electricallycoupled to metal 267 through contact 266. This metal 267 is disposed toextend along the X direction as a power supply line supplying voltageARVSS provided for the lower adjacent memory cell MC.

In short, in this configuration, as for N well voltage VDDB, the wellvoltage is supplied through a path of metal 415-contacts 216, 219-dummyactive region 402. On the other hand, as for P well voltage VSSB, thewell voltage is supplied through a path of metal 431-contacts 432,430-metals 423, 421-contacts 422, 420-metals 417, 416-contacts 404,401-the gate-isolated active regions 201#, 100# (isolation activeregion).

In this configuration, similarly to that illustrated in the firstembodiment, the power supply line supplying N well voltage VDDB isformed using a metal in the first metal interconnection layer differentfrom the third metal interconnection layer and thus does not require apiling region to the underlayer, and it is only necessary to secure apiling region for a power supply line for P well voltage VSSB.

Accordingly, although in the conventional power feed cell, the length inthe Y direction cannot be reduced in order to secure two differentpiling regions along the Y direction as described above, the presentconfiguration only requires an area for one piling region, so that thelength in the Y direction of power feed cell PMC can be reduced therebyreducing the layout area of a power feed cell. In other words, thelayout area of the memory array can be further reduced as a whole byreducing the layout area of a power feed cell.

Then, in addition, in power feed cell PMCa in accordance with the secondembodiment of the present invention, the layout area can be reduced ascompared with power feed cell PMC in the first embodiment.

Using FIG. 9, a comparison between the layouts of metals in the firstlayer of the power feed cells in accordance with the first and secondembodiments of the present invention will be described.

Here, a metal portion in the first metal interconnection layer in FIG.4( b) is shown corresponding to FIG. 9( a). In addition, a metal portionin the first metal interconnection layer shown in FIG. 8( b) is showncorresponding to FIG. 9( b).

As shown in FIG. 9( a), in the configuration in accordance with powerfeed cell PMC of the first embodiment in FIG. 4, active region 301provided in a power feed cell is independent from polysiliconinterconnection line 225 and active region 100 and needs to be disposedwith a prescribed spacing in order to secure a layout margin, so thatmetal 310 formed in the first metal interconnection layer toelectrically couple contact 213 and contact 302 needs to be formed toextend along the Y direction by a length S0 corresponding to theprescribed spacing. However, in the configuration in accordance withpower feed cell PMCa in accordance with the second embodiment of thepresent invention, the active region used in memory cell MC in the upperregion is shared, and the gate-isolated active region is used to disposea contact with a power supply line supplying P well voltage VSSB to befed to the P well facing the power feed cell, so that there is no needfor securing a layout margin. Thus, such a layout configuration can berealized in that the length corresponding to the prescribed spacing isreduced along the Y direction in metal 416 which electrically couplescontact 213 and contact 401. In short, in the configuration inaccordance with power feed cell PMCa in accordance with the secondembodiment of the present invention, the layout can be shrunken alongthe Y direction by the amount corresponding to the layout margin of theactive region provided in the power feed cell.

Therefore, in the configuration of power feed cell PMCa in the secondembodiment of the present invention, the length in the Y direction canbe designed at Y1 (<Y0), where the length in the Y direction of powerfeed cell PMC in the first embodiment of the present invention is Y0.Thus, the layout area of a power feed cell can be further reduced and inaddition, the layout area of the memory array can be further reduced asa whole.

Third Embodiment

Using FIG. 10, a layout pattern of memory cells and power feed cells ofa memory array in accordance with a third embodiment of the presentinvention will be described.

Referring to FIG. 10, here, a power feed cell PMCb is provided betweentwo memory cells MC correspondingly to a column, and four memory cellsMC and two power feed cells PMCb are shown. Furthermore, a P well regionand an N well region in which active regions for forming memory cell MCand power feed cell PMCb are disposed are alternately disposed in therow direction, namely in the X direction to extend in the columndirection, namely in the Y direction.

The layout of memory cell MC and power feed cell PMCb which isreflective symmetric with respect to the boundary region is repeatedlyarranged. Memory cell MC and power feed cell PMCb have active regionsand interconnection lines disposed in reflective symmetry in the Ydirection. Although not shown here, in a memory cell column, activeregions and interconnection lines are disposed in reflective symmetry inthe X direction between adjacent memory cells MC.

Using FIG. 11, a part of the cell layout shown in FIG. 10 will bedescribed.

Referring to FIG. 11, shown here are two memory cells MC and power feedcell PMCb provided therebetween in a memory cell column. Here, thelayout pattern of memory cell MC is similar to that illustrated in FIG.20. Therefore, a detailed description of the same parts will not berepeated and the same parts will be denoted with the same referencecharacters.

In the following, the layout pattern of power feed cell PMCb inaccordance with the third embodiment of the present invention will bedescribed. Here, a configuration in which a dummy polysiliconinterconnection line is used to supply P well voltage VSSB will bedescribed.

Using FIG. 12, a layout pattern of power feed cell PMCb in accordancewith the third embodiment of the present invention will be described.

FIG. 12( a) shows a layout pattern of an underlying portion of powerfeed cell PMCb.

Here, as described above, an N-type N well region is disposed tolinearly extend in the Y direction, and P-type P well regions aredisposed on opposite sides of the N well region. These N well region andP well regions are arranged extending in the column direction to beshared with memory cell MC, and a power feed cell for executing wellfeed is formed using transistor formation active regions formed as adummy layout pattern in these N well region and P well regions.

Then, in the P well regions of power feed cell PMCb in accordance withthe third embodiment of the present invention, the active regions usedin the memory cells MC adjacent to the upper region and the lower regionare disposed to extend further as illustrated in the second embodiment.Specifically, active regions 100# and 201# are disposed to extend to theP well regions of power feed cell PMCb. Here, shown are active region100# bent such that an L-shaped active region is reflective-symmetricalong the Y direction and active region 200# bent such that an L-shapedactive region is reflective-symmetric along the X direction. Activeregions 100# and 201# are isolated by dummy polysilicon interconnectionlines 225, 223, respectively.

Then, in a region (isolation active region) of active region 100#, whichis isolated by dummy polysilicon interconnection line 225, contact 401is disposed for establishing contact with a power supply line supplyingP well voltage VSSB to be fed to the P well. On the other hand, in aregion (isolation active region) of active region 201#, which isisolated by dummy polysilicon interconnection line 223, contact 404 isdisposed for establishing contact with a power supply line supplying Pwell voltage VSSB to be fed to the P well.

Here, the region surrounded with the dotted line as shown is a region inwhich P-type ion implantation is performed on a part of active regions100# and 201# in the P well regions. The region not surrounded with adotted line is subjected to N-type ion implantation.

As compared with the layout pattern as illustrated in FIG. 8, there aredifferences in that dummy active region 402 is replaced by a dummyactive region 500, and in that dummy polysilicon interconnection lines222 and 224 are replaced by dummy polysilicon interconnection lines 222#and 224#, respectively. The other configuration is similar to thatillustrated in FIG. 8.

Dummy active region 500 is configured in such a manner that the lengthin the Y direction is reduced and the distance between shared contacts216 and 219 is reduced thereby reducing the length in the Y direction ofthe underlying region of a power feed cell.

It is assumed that dummy polysilicon interconnection lines 222# and 224#are disposed to extend to the regions of the power feed cells adjacentin the X direction and are laid out to be shared with each other.

FIG. 12( b) shows a layout pattern up to the first metal interconnectionlayer of power feed cell PMCb.

As shown in FIG. 12( b), in the first layer, metal 416 is provided whichis electrically connected to contact 213 and contact 401. Furthermore, ametal 505 is provided which is electrically connected to shared contacts216 and 219. In addition, metal 417 is provided which is electricallyconnected to contact 404 and contact 217. This metal 505 is provided toelectrically couple only shared contacts 216 and 219 of a correspondingpower feed cell PMCb to each other and is not formed to extend toelectrically couple shared contacts 216 and 219 of the adjacent powerfeed cells to each other using the metal in the first layer asillustrated in the first and second embodiments.

Power feed cell PMCb in accordance with the third embodiment of thepresent invention uses a dummy polysilicon interconnection line sharedbetween power feed cells adjacent to each other in the X direction tosupply N well voltage VDDB. Specifically, in FIG. 12( b), polysiliconinterconnection lines 222# and 224# are used to supply N well voltageVDDB.

As described above, in the upper region, in the boundary region betweenthe upper adjacent memory cell MC and the power feed cell whichconstitute the same column, the metals connected through contacts ofmemory cell MC in the column direction are denoted by the same referencecharacters and are similar to those illustrated in FIG. 20( b), and thusa detailed description thereof will not be repeated.

Similarly, in the lower region, in the boundary region between the loweradjacent memory cell MC and the power feed cell which constitute thesame column on the lower side, the metals connected through contacts ofthe lower adjacent memory cell MC are denoted by the same referencecharacters and are similar to those illustrated in FIG. 21( b), and thusa detailed description thereof will not be repeated.

FIG. 12( c) shows a layout pattern up to the second metalinterconnection layer of power feed cell PMCb.

As shown in FIG. 12( c), in the second layer, a metal 502 is providedwhich is electrically coupled to metal 416 through a contact 501.Furthermore, a metal 504 is provided which is electrically coupled tometal 417 through a contact 507.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 135 which forms bit line BL electrically coupledthrough contact 134 of memory cell MC illustrated in FIG. 20( c) isdisposed to extend along the Y direction. Furthermore, metal 137 whichforms a power supply line supplying voltage ARVDD electrically coupledthrough contact 138 of memory cell MC is disposed to extend along the Ydirection. Similarly, metal 140 which forms bit line /BL of memory cellMC is disposed to extend along the Y direction.

Similarly, in the boundary region between the lower adjacent memory cellMC and the power feed cell which constitute the same column on the lowerside, metal 234 and metal 257 are electrically coupled to each otherthrough contact 256 illustrated in FIG. 21( c). Furthermore, metal 233and metal 137 are electrically coupled to each other through contact249. In addition, metal 232 and metal 140 are electrically coupled toeach other through contact 246.

FIG. 12( d) shows a layout pattern up to the third metal interconnectionlayer of power feed cell PMCb.

As shown in FIG. 12( d), in the third layer, a shared metal 510 isprovided which is electrically coupled to metals 502 and 504 throughcontacts 508 and 509, respectively. This metal 510 forms a power supplyline supplying P well voltage VSSB.

As for the upper region, in the boundary region between the upperadjacent memory cell MC and the power feed cell which constitute thesame column, metal 156 which forms a power supply line supplying voltageARVSS electrically coupled through contact 155 of memory cell MCillustrated in FIG. 20( d) is disposed to extend along the X direction.

On the other hand, as for the lower region, in the boundary regionbetween the lower adjacent memory cell MC and the power feed cell whichconstitute the same column on the lower side, metal 257 is electricallycoupled to metal 267 through contact 266. This metal 267 is disposed toextend along the X direction as a power supply line supplying voltageARVSS provided for the lower adjacent memory cell MC.

In short, in this configuration, as for N well voltage VDDB, the wellvoltage is supplied through a path of polysilicon interconnection line222#-contact 219-dummy active region 500. On the other hand, as for Pwell voltage VSSB, the well voltage is supplied through a path of metal510-contacts 509, 508-metals 504, 502, contacts 507, 501-metals 417,416-contacts 404, 401-the gate-isolated active regions 201#, 100#(isolation active regions).

In this configuration, the power supply line supplying N well voltageVDDB is formed using a polysilicon interconnection layer, so that apiling region from the third layer to the underlayer is not required andit is only necessary to secure a piling region for a power supply linefor P well voltage VSSB.

Accordingly, although in the conventional power feed cell, the length inthe Y direction cannot be reduced in order to secure two differentpiling regions along the Y direction as described above, the presentconfiguration only requires an area for one piling region, so that thelength in the Y direction of power feed cell PMC can be reduced therebyreducing the layout area of a power feed cell. In other words, thelayout area of the memory array can be further reduced as a whole byreducing the layout area of a power feed cell.

Then, in addition, in power feed cell PMCb in accordance with the thirdembodiment of the present invention, the layout area can be reduced ascompared with power feed cell PMC in the first embodiment.

Using FIG. 13, a comparison between the layouts of metals in the firstlayer of the power feed cells in accordance with the second and thirdembodiments of the present invention will be described.

Here, a metal portion in the first metal interconnection layer in FIG.8( b) is shown corresponding to FIG. 13( a). In addition, a metalportion in the first metal interconnection layer shown in FIG. 12( b) isshown corresponding to FIG. 13( b).

As shown in FIG. 13( a), in the configuration in accordance with powerfeed cell PMCa of the second embodiment in FIG. 8, such a configurationis employed in that N well voltage VDDB is supplied to the N well usingmetal 415 provided in the first metal interconnection layer.Specifically, N well voltage VDDB is supplied to the N well byelectrically coupling active region 402 provided in the underlyingportion to metal 415 using contacts 216 and 219. However, in theconfiguration in accordance with the third embodiment of the presentinvention, polysilicon interconnection lines 222# and 224# shared withthe adjacent power feed cells are used to supply N well voltage VDDB.Metal 505 is a metal interconnection line underlaid to restrain wiringresistance of the polysilicon interconnection line by electricallycoupling contacts 216 and 219 to each other. More specifically, as forpower feed cell PMCb provided along the X direction, N well voltage VDDBis supplied to active region 500 through shared contact 219 from onepolysilicon interconnection line 222#, and in addition, N well voltageVDDB is supplied to the other polysilicon interconnection line 224#through shared contact 219 electrically coupled to active region 500 andmetal 505 so that N well voltage VDDB is supplied to the adjacent powerfeed cell through the other polysilicon interconnection line 224#.

This configuration eliminates the need for disposing a shared metalinterconnection line in the first layer for supplying N well voltageVDDB and eliminates the need for securing a layout margin for disposinga shared metal interconnection line, so that such a layout configurationcan be realized in that the length for laying out a metalinterconnection line is reduced. In other words, in the configuration inaccordance with power feed cell PMCa in accordance with the secondembodiment of the present invention, the layout can be shrunken alongthe Y direction by an amount corresponding to the shared metalinterconnection line in the first layer. For example, the length in theY axis direction of the power feed cell of the third embodiment can bedesigned at Y2 (<Y1), where the length in the Y axis direction of thepower feed cell of the second embodiment is Y1. Thus, the layout area ofa power feed cell can be further reduced, and in addition, the layoutarea of the memory array can be further reduced as a whole.

Fourth Embodiment

In a fourth embodiment of the present invention, a manner of furtherenhancing the well voltage to be supplied to a power feed cell using apower supply line provided corresponding to a dummy memory cell will bedescribed. Here, a manner of enhancing N well voltage VDDB will bedescribed.

Using FIG. 14, memory cells and power feed cells integrated and arrangedin a matrix of a memory array in accordance with the fourth embodimentwill be described.

Referring to FIG. 14, here, a power feed cell row is providedcorresponding to four memory cell rows and a dummy memory cell column isprovided corresponding to prescribed memory cell columns.

It is assumed that dummy memory cells DMC which constitute a dummymemory cell column do not operate as normal memory cells and are notprovided with contact with a power supply line. Specifically, in thelayout pattern of memory cells in FIG. 20, contacts 136 and 138 withmetal 137 are not provided for dummy memory cell DMC.

Here, a power feed cell which corresponds to a dummy memory cell columnand further enhances a well voltage (feed enhancement cell) will bedescribed. Here, a power feed cell PMCc will be described as an example,in which the layout pattern of power feed cell PMCb in accordance withthe third embodiment is modified. The other power feed cells are powerfeed cells in accordance with the third embodiment of the presentinvention and are similar to those as illustrated above, and thus adetailed description thereof will not be repeated.

Using FIG. 15, a layout pattern of feed enhancement cell PMCc inaccordance with the fourth embodiment of the present invention will bedescribed.

FIG. 15( a) shows a layout pattern of an underlying portion of powerfeed cell PMCc.

As compared with power feed cell PMCb illustrated in FIG. 12, there is adifference in that contacts 115 and 220 which establish contact withvoltage ARDVV of the memory cells adjacent to the upper region and thelower region are deleted. The other configuration is the same.

FIG. 15( b) shows a layout pattern up to the first metal interconnectionlayer of power feed cell PMCc.

As compared with power feed cell PMCb illustrated in FIG. 12, there is adifference in that metals 125, 233 and contacts 115, 220 forestablishing contact with voltage ARVDD of the memory cells MC adjacentto the upper region and the lower region are deleted. The otherconfiguration is the same.

FIG. 15( c) shows a layout pattern up to the second metalinterconnection layer of power feed cell PMCc.

As compared with power feed cell PMCb illustrated in FIG. 12, there is adifference in that metal 505 and metal 137 are electrically coupledthrough contact 600. This metal 137 is formed as a power supply linesupplying N well voltage VDDB.

FIG. 15( d) shows a layout pattern up to the third metal interconnectionlayer of power feed cell PMCc, which has a similar configuration to thatillustrated in FIG. 12.

In summary, in this configuration, as for N well voltage VDDB, the wellvoltage is supplied through a path of polysilicon interconnection line222#-contact 219-contact 600-dummy active region 500, and in addition,the well voltage is supplied through a path of metal 137-contact600-metal 505-contacts 216, 219-active region 500.

In this configuration, as for feed enhancement cell PMCc, the powersupply line supplying N well voltage VDDB is formed using not only apolysilicon interconnection line but also a power supply line providedcorresponding to a dummy memory cell column, so that the well voltagewhich is further enhanced can be supplied.

In the fourth embodiment, the layout pattern of the feed enhancementcell has been described using the layout pattern of power feed cell PMCbin accordance with the third embodiment. However, without being limitedto power feed cell PMCb in accordance with the third embodiment, a feedenhancement cell may be designed in a similar manner using the layoutpatterns of the power feed cells in accordance with the first and secondembodiments.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

1. A semiconductor memory device comprising: a memory array having aplurality of memory cells arranged in a matrix of rows and columns; aplurality of bit line pairs arranged corresponding to the respectivememory cell columns; a plurality of word lines arranged corresponding tothe respective memory cell rows; a plurality of first power supply linessupplying a first power supply voltage to the corresponding memorycells; a plurality of second power supply lines supplying a second powersupply voltage to the corresponding memory cells; and a plurality ofpower feed cells provided corresponding to the respective memory cellcolumns, feeding a first P well region, a second P well region and a Nwell region extended in a column direction respectively, wherein saidmemory cell including a first and a second P-channel MOS loadtransistors arranged on said N well region, having source nodes suppliedsaid first power supply voltage, a first N-channel MOS driver transistorarranged on said first P well region, connected to said first P-channelMOS load transistor to configure a first inverter, having a source nodesupplied said second power supply voltage, a second N-channel MOS drivertransistor arranged on said second P well region, connected to saidsecond P-channel MOS load transistor to configure a second inverter,having a source node supplied said second power supply voltage, a firstN-channel MOS access transistor arranged on said first P well region,connected to said first inverter, and a second N-channel MOS accesstransistor arranged on said second P well region, connected to saidsecond inverter, wherein said power feed cell including a third powersupply line supplying a third power supply voltage to said N wellregion, and two fourth power supply lines arranged in parallel,supplying a fourth power supply voltage to said first and second P wellregions, wherein said third power supply line is structured on a firstmetal interconnection layer, said first power supply line is structuredon a second metal interconnection layer above said first connectionlayer, and said fourth power supply lines are structured on a thirdmetal interconnection layer above said second connection layer.
 2. Thesemiconductor memory device according to claim 1, said N well region,said first P well region and said second N well region are arranged inthe order of said first P well region, said N well region and saidsecond N well region in said row direction.
 3. A semiconductor memorydevice comprising: a memory array having a plurality of memory cellsarranged in a matrix of rows and columns; a plurality of bit line pairsarranged corresponding to the respective memory cell columns; aplurality of word lines arranged corresponding to the respective memorycell rows; a plurality of first power supply lines supplying a firstpower supply voltage to the corresponding memory cells; a plurality ofsecond power supply lines supplying a second power supply voltage to thecorresponding memory cells; and a plurality of power feed cells providedcorresponding to the respective memory cell columns, feeding a first Pwell region, a second P well region and a N well region extended in acolumn direction respectively, wherein said memory cell including afirst and a second P-channel MOS load transistors formed on said N wellregion, having source nodes supplied said first power supply voltage, afirst N-channel MOS driver transistor formed on said first P wellregion, connected to said first P-channel MOS load transistor toconfigure a first inverter, having a source node supplied said secondpower supply voltage, a second N-channel MOS driver transistor formed onsaid second P well region, connected to said second P-channel MOS loadtransistor to configure a second inverter, having a source node suppliedsaid second power supply voltage, a first N-channel MOS accesstransistor formed on said first P well region, connected to said firstinverter, and a second N-channel MOS access transistor formed on saidsecond P well region, connected to said second inverter, wherein saidpower feed cell including a third power supply line electrically coupledto said N well region, supplying a third power supply voltage to said Nwell region, and two fourth power supply lines arranged in parallel andelectrically coupled to said first and second P well regions, supplyinga fourth power supply voltage to said first and second P well regions,wherein said third power supply line is formed in a first metalinterconnection layer, said first power supply line is formed in asecond metal interconnection layer above said first connection layer,and said fourth power supply lines are formed in a third metalinterconnection layer above said second connection layer.